高端磨料

F1200

Silicon Carbide Grain for Industrial Applications

$599.99

纯度 90% min Silicon Carbide
工业 Iron & Steel Manufacturing
结构 粉尘
源头 国产

ISO Certified

ISO 9001 / 14001 / 45001

Premium Quality

Rigorous testing standards

Fast Delivery

Reliable logistics network

Expert Support

24/7 technical assistance

产品详情

The black crystal silicon carbide with high density produced in our plant is made from high purity quartz sand and petroleum coke. The products are melted through high temperature up to 2500C in the electronic furnace. The products have high hardness good thermal endurance wear resistance, radiation resistance, thermal shock resistance, and good electrical and thermal conductivity,and are widely used in engineering ,chemistry ,electronic ,metallurgy and defense industries. Our company can produce different sizes of silicon carbide, according to the national and international standards GB,ISO,ANSI,FEPA,JIS, etc.

Silicon carbide (SiC), also known as carborundum, is a compound of silicon and carbon with chemical formula SiC. It occurs in nature as the extremely rare mineral moissanite. Synthetic silicon carbide powder has been mass-produced since 1893 for use as an abrasive. Grains of silicon carbide can be bonded together by sintering to form very hard ceramics that are widely used in applications requiring high endurance, such as car brakes, car clutches and ceramic plates in bulletproof vests. Electronic applications of silicon carbide such as light-emitting diodes (LEDs) and detectors in early radios were first demonstrated around 1907. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both. Large single crystals of silicon carbide can be grown by the Lely method; they can be cut into gems known as synthetic moissanite. Silicon carbide with high surface area can be produced from SiO2 contained in plant material.

Micronized Particle Size Composition Comparison Table

Comparison of particle size standards across China GB-2476-83, GB/T 2481.2-1998, and Japan JISR6001-1987

China

GB-2476-83

Grade Size Range (μm)
W6363-50
W5050-40
W4040-28
W2828-20
W2020-14
W1414-10
W1010-7
W77-5
W55-3.5

China

GB/T 2481.2-1998

Grade ds50 (μm)
F23053 ± 3.0
F24044.5 ± 2.0
F28036.5 ± 1.5
F32029.2 ± 1.5
F36022.8 ± 1.5
F40017.3 ± 1.5
F50012.8 ± 1.0
F6009.3 ± 1.0
F8006.5 ± 1.0
F10004.5 ± 0.8
F12003.0 ± 0.5

Japan

JISR6001-1987

Grade ds50 (μm)
#24057.0 ± 3.0
#28048.0 ± 3.0
#32040.0 ± 2.5
#36035.0 ± 2.0
#40030.0 ± 2.0
#50025.0 ± 2.0
#60020.0 ± 1.5
#70017.0 ± 1.3
#80014.0 ± 1.0
#100011.5 ± 1.0
#12009.5 ± 0.8
#15008.0 ± 0.6
#20006.7 ± 0.6
#25005.5 ± 0.5
#30004.0 ± 0.5
#40003.0 ± 0.4
#60002.0 ± 0.4
#80001.2 ± 0.3

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